Core level photoemission studies of the sulphur terminated Ge(100) surface-Reference-Cited by-同舟云学术

Core level photoemission studies of the sulphur terminated Ge(100) surface

Published:2001-04 Issue:3-4 Volume:174 Page:271-274
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Roche J,Ryan P,Hughes G.J

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Photoemission surface core-level study of sulfur adsorption on Ge(100)

2. Surface-bonding geometry of (2×1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique

3. T. Weser, A. Bogen, B. Konrad, R.D. Schnell, C.A. Schug, W. Steinmann, in: O. Engstrom (Ed.), Proceedings of the 18th International Conference on the Physics of Semiconductors, World Scientific, Singapore, 1987, p. 97, Surf. Sci. 210 (1988) 245–256.

4. Sulfur-inducedc(4×4) reconstruction of the Si(001) surface studied by scanning tunneling microscopy

5. An X-ray absorption fine structure study of Ge(001)(2×1)-S

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