Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration-Reference-Cited by-同舟云学术

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Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration

Published:2003-01 Issue: Volume:203-204 Page:302-305
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cho S.B,Shon H.K,Kang H.J,Hong T.E,Kim H.K,Lee H.I,Kim K.J,Moon D.W

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference5 articles.

1. Ion implantation for in-situ quantitative ion microprobe analysis

2. Estimation of the electronic straggling using delta-doped multilayers

3. Ion beam crystallography of surfaces and interfaces

4. Direct observation of Si lattice strain and its distribution in the Si(001)–SiO2 interface transition layer

5. Ion scattering analysis programs for studying surface and interface structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Glow-discharge spectrometry for direct analysis of thin and ultra-thin solid films;TrAC Trends in Analytical Chemistry;2006-01

2. Deconvolution of SIMS depth profiles of As multiple delta layers in silicon;Surface and Interface Analysis;2005

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