Author:
Kataoka Y.,Yamazaki K.,Shigeno M.,Tada Y.,Wittmaack K.
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference7 articles.
1. Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding
2. Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolution in Si during 1 keV 60° O[sub 2][sup +] bombardment with oxygen flooding
3. Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate
4. Y. Kataoka, M. Shigeno, K. Wittmaack, Ultra shallow junctions 2001, in: M. Foad (Ed.), Proceedings of the Sixth International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Napa, CA, 2001, p. 128.
5. Quantitative analysis of nitrogen in oxynitrides on silicon by MCs[sup +] secondary ion mass spectrometry?
Cited by
35 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献