Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference21 articles.
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2. Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on silicon;Journal of Crystal Growth;1999-05
3. Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces;Journal of Crystal Growth;1998-06
4. Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE;Journal of Crystal Growth;1998-06
5. Anisotropic surface diffusion at crystal facet transitions during localized GaInAsP growth by MOMBE;Microelectronics Journal;1997-10
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