Anisotropic surface diffusion at crystal facet transitions during localized GaInAsP growth by MOMBE
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE);Heinecke;J. Crystal Growth,1992
2. Beam geometrical effects on planar selective area epitaxy of InP/GaInAs heterostructures;Wachter;J. Crystal Growth,1996
3. Facet formation and characterization of III–V structures grown on patterned surfaces;Heinecke;Microelectronics J.,1997
4. Facet growth in selective area epitaxy of InP by MOMBE;Matz;J. Crystal Growth,1993
5. Novel III/V heterostructures fabricated by metalorganic molecular beam epitaxy;Heinecke;Physica Scripta,1994
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1. A parameter study of epitaxial crystal growth;Chaos, Solitons & Fractals;2000-05
2. Morphology of homo-epitaxial vicinal (100) III–V surfaces;Journal of Crystal Growth;1999-04
3. Material localisation at GaInAsP-ridge-structures selectively grown by MOMBE;Journal of Crystal Growth;1998-12
4. Pretzel Orbits in Simulations of Epitaxial Crystal Growth;International Journal of Bifurcation and Chaos;1998-07
5. Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE;Journal of Crystal Growth;1998-06
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