Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT-Reference-Cited by-同舟云学术

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Optical and electrical properties of amorphous and microcrystalline GaN films and their application to transparent TFT

Published:1997-04 Issue: Volume:113-114 Page:480-484
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kobayashi Satoshi,Nonomura Shuichi,Ohmori Takashi,Abe Koichi,Hirata Satoshi,Uno Takahito,Gotoh Tamihiro,Nitta Shoji,Kobayashi Satoshi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. GaN, AlN, and InN: A review

3. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

4. Optimizations of the Film Deposition Parameters for the Hydrogenated Amorphous Silicon Solar Cell

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering;APL Materials;2024-08-01

2. Thermal annealing and channel composition influences on the electrical properties of transparent-TFTs based on Zn-In-SnO ternary compound: Experiment and modeling;Chinese Journal of Physics;2019-12

3. Selective growth of GaN nanorods on the top of GaN stripes;Journal of the Korean Crystal Growth and Crystal Technology;2014-08-31

4. Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors;Journal of Nanoelectronics and Optoelectronics;2013-06-01

5. Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer;IEEE Electron Device Letters;2013-04

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