Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. 20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications
2. 46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver
3. Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal
4. Performance enhancement of GaInP/GaAs heterojunction bipolar phototransistors using dc base bias
5. Evidence of optical gain improvement in AlGaAs/GaAs heterojunction phototransistors using an emitter shoulder structure
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2. Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor;Chinese Physics B;2015-03-31
3. Band offsets of semiconductor heterostructures: A hybrid density functional study;Applied Physics Letters;2010-08-30
4. AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE;Journal of Crystal Growth;2008-11
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