Quantitative ion implantation: Theoretical aspects-Reference-Cited by-同舟云学术

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Quantitative ion implantation: Theoretical aspects

Published:1979-06 Issue:2 Volume:30 Page:97-112
ISSN:0020-7381
Container-title:International Journal of Mass Spectrometry and Ion Physics
language:en
Short-container-title:International Journal of Mass Spectrometry and Ion Physics

Author:

Gries W.H.

Publisher

Elsevier BV

Subject

Spectroscopy

Reference37 articles.

1. New solid standards for the determination of trace impurities in metals by flameless atomic absorption spectrometry

2. W.H. Gries and F.T. Wybenga, submitted for publication

3. Determination of the half-life 137Cs by a new method

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Secondary-Ion Emission: Matrix Effect;Uspehi Fiziki Metallov;2018-12-01

2. High accuracy traceable Rutherford backscattering spectrometry of ion implanted samples;Anal. Methods;2014

3. Isotopic fractionation of silicon negative ions sputtered from minerals by Cs+ bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-03

4. Quantitative SIMS analysis of nitrogen using in situ internal implantation;Applied Surface Science;1999-05

5. Ion-implanted Surface Analysis Reference Materials: Certification of Dose Densities from 1016 to 1013 cm-2;Surface and Interface Analysis;1996-07

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