Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy-Reference-Cited by-同舟云学术

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Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

Published:2000-02 Issue: Volume:154-155 Page:337-344
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Flicstein J.,Guillonneau E.,Marquez J.,How Kee Chun L.S.,Maisonneuve D.,David C.,Wang Zh.,Palmier J.F.,Courant J.L.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Monte Carlo low pressure deposition profile simulations

2. Photochemical Processing of Electronic Materials;Flicstein,1992

3. M. Petitjean, Thèse, Docteur en Sciences, Université Paris XI Orsay, 1991.

4. Modelling of silicon nitride deposition by 254 nm Hg-photosensitization and 185 nm photolysis of SiH4/NH3 gas mixture

5. Tunable UV-flash krypton lamp array useful for large area deposition and in situ UV annealing of Si-based dielectrics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic Monte Carlo Simulation of Chemical Vapor Deposition;Annual Review of Materials Research;2002-08

2. Topographic study of sputter-deposited film with different process parameters;Journal of Applied Physics;2001-06-15

3. Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy: discrete representation and topological analysis;Computational Materials Science;2000-06

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