Initial growth stages of CaF2 on Si(111) investigated by scanning tunneling microscopy
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference20 articles.
1. Growth kinetics ofCaF2/Si(111) heteroepitaxy: An x-ray photoelectron diffraction study
2. Surface core-level shifts in CaF2-on-Si(111) films: Experiment and theory
3. Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)
4. Epitaxial growth mechanisms and structure ofCaF2/Si(111)
5. Parallel Adatom Chains on Si(111): A Chemisorption-Induced Surface Reconstruction
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1. Periodically spaced CaF2 semi-insulating thin ribbons growth study on the Si(100) surface;Materials Advances;2022
2. Scanning tunneling microscopy study of CaF2 on Si(111): observation of metastable reconstructions;Journal of Physics D: Applied Physics;2021-11-23
3. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data;Physical Review B;2018-03-15
4. Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template;Surface Science;2012-10
5. Formation of nanoscale clusters during the initial stages of CaF2 growth on miscut Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-09
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