Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature-Reference-Cited by-同舟云学术

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Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

Published:2000-07 Issue:1-2 Volume:161 Page:268-275
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Ki-jeong,Kang Tai-Hee,Kim Kwang-woo,Shin Hyun-joon,Kim Bongsoo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Epitaxial CoSi2 and NiSi2 thin films

2. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications

3. CoSi2 on Si(100): LEED investigations of the c(2 × 2) and (2√2 × √2) phases and comparison to a bulk crystal CoSi2(100) surface

4. LEED structure determination of the (100)-surface of a CoSi2 crystal and a CoSi2 film grown epitaxially on Si(100)

5. Epitaxy ofCoSix(1

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1. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi ₂;Materials Research Innovations;2024-05-09

2. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-04

3. Electronic and Optical Properties of NiSi2/Si Nanofilms;Technical Physics;2019-05

4. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature;Technical Physics;2015-10

5. Thermal stability of an ultrathin hafnium oxide film on plasma nitrided Si(100);Surface Science;2013-10

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