The interaction of cesium-oxide overlayers with Ge(1 1 1) as a function of annealing temperature-Reference-Cited by-同舟云学术

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The interaction of cesium-oxide overlayers with Ge(1 1 1) as a function of annealing temperature

Published:2001-03 Issue:1-2 Volume:173 Page:8-14
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wu J.X.,Ma M.S.,Zhu J.S.,Ji M.R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Core‐level photoemission of the Cs‐O adlayer of NEA GaAs cathodes

2. The onset of the oxidation of a cesiated GaAs(100) surface

3. Adsorption of potassium and oxygen on GaAs(110): Charge transfer and enhanced oxidation

4. Catalytic oxidation of Si(100) and InP(100) surfaces

5. Cs and O adsorption on Si(100) 2×1: A model system for promoted oxidation of semiconductors

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