The onset of the oxidation of a cesiated GaAs(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference29 articles.
1. Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces
2. Summary Abstract: X‐ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Auger electron spectroscopy study of (Cs–O) activated GaAs(100) surfaces
3. SiO2‐Si interface formation by catalytic oxidation using alkali metals and removal of the catalyst species
4. Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces
5. Precursor molecular-oxygen state in the initial catalytic oxidation of the InP(110) surface modified by alkali metals
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4. Annealing behavior of a Cs2O/Cs2O2/GaAs(110) surface studied by electron spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-09
5. Adsorption kinetics of the Cs–O activation layer on GaAs(1 0 0);Applied Surface Science;2001-12
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