Interaction between an amorphous SiNx layer made by an ion-beam technique and a cerium overlayer-Reference-Cited by-同舟云学术

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Interaction between an amorphous SiNx layer made by an ion-beam technique and a cerium overlayer

Published:2001-04 Issue:1 Volume:174 Page:7-12
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ji M.R.,Wu J.X.,Ma M.S.,Yang H.W.,Zhu J.S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Synthesis of cubic silicon nitride

2. The preparation, characterization and applications of silicon nitride thin films

3. Amorphous silicon‐silicon nitride thin‐film transistors

4. Gmelin Handbook of Inorganic and Organometallic Chemistry (Si Suppl. B 5c), Springer, Berlin, 1991.

5. Theory of MNOS memory transistor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial and structural characteristics of CeO films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment;Thin Solid Films;2002-09-02

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