Interfacial and structural characteristics of CeO films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment-Reference-Cited by-同舟云学术

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Interfacial and structural characteristics of CeO films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment

Published:2002-09-02 Issue:1-2 Volume:416 Page:122-128
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

KANG J,XUN K,LIU X,HAN R,WANG Y,YU D,LIAN G,XIONG G,WU S

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures;Materials Research Express;2024-06-01

2. Defects disorder of lanthanum cerium oxide;Metal Oxide Defects;2023

3. Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient;International Journal of Energy Research;2022-06-03

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