On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts-Reference-Cited by-同舟云学术

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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts

Published:2000-10 Issue:1-4 Volume:166 Page:520-525
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dmitruk N.L.,Ermolovich I.B.,Konakova R.V.,Lytvyn O.S.,Lytvyn P.M.,Milenin V.V.,Prokopenko I.V.,Venger E.F.,Voitsikhovskyi D.I.,Boltovets N.S.,Ivanov V.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. Nb/GaAs and NbN/GaAs Schottky barriers

2. Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs

3. Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Short-Term Annealing on the Crystalline Structure of Metallic Multilayers with a TiB₂ Anti-Diffusion Layer on GaAs Substrate;Materials Science Forum;2004-01

2. Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing;Semiconductors;2003-09

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