Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing-Reference-Cited by-同舟云学术

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Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing

Published:2003-09 Issue:9 Volume:37 Page:1114-1118
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Boltovets N. S.,Ivanov V. N.,Konakova R. V.,Lytvyn P. M.,Lytvyn O. S.,Milenin V. V.,Prokopenko I. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1610130.pdf

Reference10 articles.

1. G. Y. Robinson, Solid-State Electron. 18, 331 (1975).

2. A. K. Rai, R. S. Bhattacharya, and Y. S. Park, Thin Solid Films 114, 379 (1984).

3. B. A. Lapshinov, A. B. Kamnev, L. N. Kravchenko, et al., Zarubezh. Élektron. Tekh., No. 5, 58 (1987).

4. A. A. Raskin and S. V. Shalimov, Zarubezh. Élektron. Tekh., No. 12, 32 (1990).

5. Yu. A. Gol’dberg, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28, 1681 (1994) [Semiconductors 28, 935 (1994)].

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2. New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis;Semiconductor physics, quantum electronics and optoelectronics;2005-12-15

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