1. The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process;Perry;Appl. Phys. Lett.,1978
2. Energy loss spectrum of AlN in the 6–120 eV region;Guo,1997
3. Bandgap of Ga1−xInxN and Ga1−xAlxN alloys as a function of composition;Pugh,1998
4. One-dimensional simulation of charge control in a novel AlN/GaN insulated gate hetero-structure field effect transistor with modulation doping;Imanaga,1997
5. GaN based laser-structures on sapphire substrates using single crystalline AlN buffer layers;Ohba,1998