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GaAs surface passivation using in-situ oxide deposition

Published:1996-09 Issue: Volume:104-105 Page:441-447
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Passlack M.,Hong M.,Opila R.L.,Mannaerts J.P.,Kwo J.R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Physics and Chemistry of III–V Compound Semiconductor Interfaces,1985

2. A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength Photodetectors

3. Unpinned (100) GaAs surfaces in air using photochemistry

4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

5. Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

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1. Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells;Solar RRL;2023-07-26

2. Potential high efficiency of GaAs solar cell with heterojunction carrier selective contact layers;Physica B: Condensed Matter;2021-06

3. Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface;Applied Surface Science;2020-12

4. Non-epitaxial carrier selective contacts for III-V solar cells: A review;Applied Materials Today;2020-03

5. Design and analysis of an electrically pumped GaAs quantum dot plasmonic nanolaser;Optik;2020-02

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