Influence of the rapid thermal annealing in vacuum on the XPS characteristics of thin SiO2
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. Effects of rapid thermal processing on thermal oxides of silicon
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3. Thin fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/
4. SIMS and AES characterization of ultrathin nitroxide dielectric layers on silicon prepared by N2O-RTP
5. Nitrogen incorporation in SiO2by rapid thermal processing of silicon and SiO2in N2O
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4. XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomers;Le Journal de Physique IV;1999-09
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