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Titanium disilicide formation by rf plasma enhanced chemical vapor deposition and film properties

  • Published:2003-02 Issue:1-4 Volume:206 Page:159-166
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Fouad Osama A.,Yamazato Masaaki,Ichinose Hiromichi,Nagano Masamitsu

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding substrate-driven growth mechanism of copper silicide nanoforms and their applications;Materials Science and Technology;2023-04-12

2. Development of CVD Ti-containing films;Progress in Materials Science;2013-10

3. Hysteresis, structural and composition characteristics of deposited thin films by reactively sputtered titanium target in Ar/CH4/N2gas mixture;Materials Science and Technology;2013-08

4. Field-emission of TiSi2 thin film deposited by an in situ chloride-generated route;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

5. Ultra-thin and high-aspect-ratio TiN nanosheets;Journal of Crystal Growth;2008-02
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