Low-energy electron-excited nanoluminescence studies of GaN and related materials-Reference-Cited by-同舟云学术

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Low-energy electron-excited nanoluminescence studies of GaN and related materials

Published:2002-05 Issue:1-4 Volume:190 Page:498-507
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Brillson L.J.,Bradley S.T.,Goss S.H.,Sun X.,Murphy M.J.,Schaff W.J.,Eastman L.F.,Look D.C.,Molnar R.J.,Ponce F.A.,Ikeo N.,Sakai Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. The structure and properties of metal-semiconductor interfaces

2. L.J. Brillson, in: P.T. Landsberg (Ed.), Handbook on Semiconductors, Vol. 1, North-Holland, Amsterdam, 1992, pp. 281–417 (Chapter 7).

3. Cathodoluminescence spectroscopy studies of laser‐annealed metal–semiconductor interfaces

4. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100 eV) electron beams using beam deceleration technique;Japanese Journal of Applied Physics;2018-11-27

2. Applications of depth-resolved cathodoluminescence spectroscopy;Journal of Physics D: Applied Physics;2012-04-12

3. Low-energy cathodoluminescence microscopy for the characterization of nanostructures;Science and Technology of Advanced Materials;2010-02

4. Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film;Journal of Crystal Growth;2005-07

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