Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference20 articles.
1. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe
2. Indium doping of HgCdTe layers during growth by molecular beam epitaxy
3. Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant
4. Low‐level extrinsic doping for p‐ and n‐type (100) HgCdTe grown by molecular‐beam epitaxy
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1. Structure and Electrical Characteristics of Metal/MCT Interfaces;Mercury Cadmium Telluride;2010-09-04
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