Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells-Reference-Cited by-同舟云学术

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Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Published:2002-05 Issue:1-4 Volume:190 Page:191-194
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ferreira E.C.,da Costa J.A.P.,Freire J.A.K.,Farias G.A.,Freire V.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference9 articles.

1. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

2. Splitting of the excitonic peak in quantum wells with interfacial roughness

3. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

4. (a) E.C. Ferreira, J.A.P. da Costa, J.A.K. Freire, V.N. Freire, G.A. Farias, Proceedings of the ICSMM-2000, J. Kor. Phys. Soc. 39 (2001) 485

5. Confined electron and shallow donor states in graded GaAs/Al Ga As spherical quantum dots

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2. Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs;The European Physical Journal Applied Physics;2014-04

3. Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure;Physica E: Low-dimensional Systems and Nanostructures;2010-06

4. Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells;Brazilian Journal of Physics;2009-04

5. Theoretical investigation of excitons in type-I and type-IISi∕Si1−xGexquantum wires;Physical Review B;2006-08-25

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