Surface preparation of 4H–SiC substrates for hot-wall CVD of SiC layers-Reference-Cited by-同舟云学术

Surface preparation of 4H–SiC substrates for hot-wall CVD of SiC layers

Published:2001-12 Issue:1-4 Volume:184 Page:55-59
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wagner G.,Doerschel J.,Gerlitzke A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. High temperature CVD growth of SiC

2. J.A. Powell, D.J. Larkin, L. Zhou, P. Pirouz, Trans. Third Int. High Temperature Electronics Conference, Sandia Natl. Labs., Albuquerque, 1996, p. II-3.

3. Characterization of Polishing‐Related Surface Damage in (0001) Silicon Carbide Substrates

4. Raman scattering as a probing method of subsurface damage in SiC

5. J.A. Powell, D.L. Larkin, Phys. Stat. Sol. (b) 202 (1997) 529.

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