On the origin of resonance features in reflectance difference data of silicon-Reference-Cited by-同舟云学术

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On the origin of resonance features in reflectance difference data of silicon

Published:2001-05 Issue: Volume:175-176 Page:769-776
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hingerl K,Balderas-Navarro R.E,Bonanni A,Tichopadek P,Schmidt W.G

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

2. Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

3. Insituspectroscopic ellipsometry of GaAs(001) surface reconstructions

4. T. Yasuda, K. Kimura, S. Miwa, L.H. Kuo, C.G. Jin, K. Tanaka, T. Yao, Phys. Rev. Lett. 77 (1996) 326, and references therein.

5. In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

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