Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

Published:2001-05 Issue: Volume:175-176 Page:43-48
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tsukidate Y,Suemitsu M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture

2. P‐Doped Polysilicon Film Growth Technology

3. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process Characterization

4. Gas source Si-MBE

5. Growth kinetics in silane gas-source molecular beam epitaxy

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1. Surface Chemistry of Si Epitaxy and Growth Modeling;Shinku;2006

2. Effects of<tex>$hboxH_2$</tex>Annealing and Polysilicon Emitter Structure on<tex>$hboxH_FE$</tex>of n–p–n Bipolar Junction Transistors;IEEE Transactions on Semiconductor Manufacturing;2005-11

3. On designing sub-70-nm semiconductor materials and processes;IEEE Transactions on Semiconductor Manufacturing;2002-05

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