Surface Chemistry of Si Epitaxy and Growth Modeling
Author:
Publisher
The Vacuum Society of Japan
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics
Reference10 articles.
1. Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
2. Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
3. Hydrogen desorption kinetics from the growing Si(100) surface during silane gas‐source molecular beam epitaxy
4. Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:In situobservations and detailed modeling of the growth
5. Effects of mixing germane in silane gas‐source molecular beam epitaxy
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