The effects of ambient He pressure on the oxygen density of Er-doped SiOx thin films grown by laser ablation of a Si:Er2O3 target-Reference-Cited by-同舟云学术

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The effects of ambient He pressure on the oxygen density of Er-doped SiOx thin films grown by laser ablation of a Si:Er2O3 target

Published:2003-09 Issue:1-4 Volume:218 Page:311-317
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Park Seung Min,Bae Chang Hyun,Nam Sang Hwan,Jang Young Rae,Yoo Keon Ho,Ha Jeong Sook

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Optical activation and excitation mechanisms of Er implanted in Si

2. Optically active erbium centers in silicon

3. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy

4. Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation

5. Erbium in oxygen‐doped silicon: Optical excitation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition;Applied Physics Letters;2005-01-10

2. Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere;Japanese Journal of Applied Physics;2004-04-09

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