Simulation of oxide sputtering and SIMS depth profiling of delta-doped layer-Reference-Cited by-同舟云学术

Simulation of oxide sputtering and SIMS depth profiling of delta-doped layer

Published:2003-01 Issue: Volume:203-204 Page:62-68
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yamamura Y.,Ishida M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

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2. Beam-induced broadening effects in sputter depth profiling

3. Dependence of interface widths on ion bombardment conditions in secondary ion mass spectrometric analysis of a nickel/chromium multilayer structure

4. Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ion bombardment

5. Ta2O5/SiO2 multilayered thin film on Si as a proposed new reference material for SIMS depth profiling

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