Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy-Reference-Cited by-同舟云学术

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Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy

Published:2002-06 Issue:1-4 Volume:194 Page:101-105
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Revesz A.G,Anwand W,Brauer G,Hughes H.L,Skorupa W

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Characterization of defects in Si and SiO2−Si using positrons

2. Investigation of the transition region between layers wet grown at and Si

3. Analysis of positron beam data by the combined use of the shape‐ and wing‐parameters

4. Stresses and silicon interstitials during the oxidation of a silicon substrate

5. Positronium formation in SiO2films grown on Si substrates studied by monoenergetic positron beams

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