Real dimensional simulation of silicon etching in CF4 + O2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference16 articles.
1. Surface processes in CF4/O2reactive etching of silicon
2. Surface analysis of realistic semiconductor microstructures
3. Effects of ion bombardment in plasma etching on the fluorinated silicon surface layer: Real‐time and postplasma surface studies
4. Chemiluminescence and the reaction of molecular fluorine with silicon
5. Modeling and simulation methods for plasma processing
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1. Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness;Scientific Reports;2018-02-05
2. Simulations and Experiments on O Density and Distribution in Ashing Process Using Surface Plasma Excited by Microwave;Japanese Journal of Applied Physics;2013-08-01
3. Influence of activated polymer on the etching rate of SiO2 in CF4+H2 plasma;Microelectronic Engineering;2009-01
4. Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma;Microelectronic Engineering;2007-04
5. Simulation of anisotropic etching of silicon in SF6+O2 plasma;Sensors and Actuators A: Physical;2006-11
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