Ion sputtering, surface topography, SPM and surface analysis of electronic materials
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference85 articles.
1. H.H. Andersen, in: J.S. Williams, J.M. Poate (Eds.), Ion Implantation and Beam Processing, Academic Press, London, 1984, pp. 127–187.
2. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage
3. Ion-beam induced compositional changes in alloys at elevated temperatures
4. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment
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