Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer-Reference-Cited by-同舟云学术

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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

Published:1999-04 Issue:1-4 Volume:142 Page:336-340
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Peng Y.C,Chen L.J,Hsieh W.Y,Yang Y.R,Hsieh Y.F

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Interconnects and Contacts for VLSI Applications

2. Development of the self-aligned titanium silicide process for VLSI applications

3. Titanium Silicides and their Technological Applications

4. Metal contacts on shallow junctions

5. Kinetic mechanisms of theC49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transition

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C54-TiSi2 formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks;Thin Solid Films;2024-06

2. Impact of nanosecond laser energy density on the C40-TiSi2 formation and C54-TiSi2 transformation temperature;Journal of Applied Physics;2020-08

3. Ultra-thin and high-aspect-ratio TiN nanosheets;Journal of Crystal Growth;2008-02

4. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

5. Silicide Contacts for Sub-0.25 μm Devices;MRS Proceedings;1999

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