Effects of background gas–plume interaction in the deposition of SiNx films-Reference-Cited by-同舟云学术

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Effects of background gas–plume interaction in the deposition of SiNx films

Published:1998-05 Issue: Volume:127-129 Page:1005-1010
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Samano E.C.,Machorro R.,Soto G.,Cota-Araiza L.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. The electrophysical properties of silicon nitride at low temperatures

2. Atomic microstructure and electronic properties ofa‐SiNx:H deposited by radio frequency glow discharge

3. D.B. Geohegan, in: D.B. Chrisey, G.K. Hubler (Eds.), Pulsed Laser Deposition of Thin Films, Wiley, New York, 1994, Chap. 5.

4. Low‐temperature synthesis of silicon oxide, oxynitride, and nitride films by pulsed excimer laser ablation

5. Optical Characteristics of Amorphous Silicon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

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1. Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition;Applied Surface Science;2006-09

2. Optimal control on composition and optical properties of silicon oxynitride thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-07

3. Influences of the nitrogen content on the morphological, chemical and optical properties of pulsed laser deposited silicon nitride thin films;Surface and Coatings Technology;2005-03

4. Pulsed laser deposition of non-stoichiometric silicon nitride (SiNx) thin films;Applied Physics A;2004-09

5. XPS, AES, and EELS characterization of nitrogen-containing thin films;Journal of Electron Spectroscopy and Related Phenomena;2004-03

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