Metal-semiconductor fluctuations on reconstructed SnSi(111) surfaces-Reference-Cited by-同舟云学术

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Metal-semiconductor fluctuations on reconstructed SnSi(111) surfaces

Published:1998-01 Issue: Volume:123-124 Page:480-484
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Anyele H.T.,Griffiths C.L.,Cafolla A.A.,Matthai C.C.,Williams R.H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Studies of monolayers of lead and tin on Si(111) surfaces

2. Structural study of Sn-induced superstructures on Ge(111) surfaces by RHEED

3. Structural study of ultrathin Sn layers deposited onto Ge(111) and Si(111) surfaces by RHEED

4. The structure of the surface determined using X-ray diffraction

5. Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 √3 ×2 √3 )R30° reconstructed surface

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen activation on Pt–Sn nanoalloys supported on mixed Sn–Ce oxide films;Physical Chemistry Chemical Physics;2014

2. X-ray standing wave analysis of theSn∕Si(111)−√3×√3surface;Physical Review B;2004-12-15

3. Structural and electronic properties of the Sn/Si(111)-(2√3×2√3)R30° surface revised;Surface Science;2004-04

4. Contrasted electronic properties of Sn-adatom-based(3×3)R30°reconstructions on Si(111);Physical Review B;2001-08-23

5. Initial stages of Sn adsorption on Si(111)-(7×7);Surface Science;2001-06

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