MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Heterojunction field‐effect transistors based on AlGaSb/InAs
2. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
3. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers
4. High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
5. Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors
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1. Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP;Journal of Crystal Growth;2020-10
2. Elastic constants and mechanical stability of InxAl1 − xAsySb1 − y lattice-matched to different substrates;Philosophical Magazine;2018-07-12
3. Energy gaps and refractive index of lattice-matched and mismatched InxAl1−xAsySb1−y quaternaries;Optik;2018-04
4. Growth and characterization of AlInAsSb layers lattice-matched to GaSb;Journal of Crystal Growth;2017-11
5. Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers;Photonics;2016-04-20
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