Dislocation introduction in the initial stages of MBE growth of highly strained structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)
2. First stages of the MBE growth of InAs on (001)GaAs
3. A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffraction
4. Structure of lattice‐strained InxGa1−xAs/GaAs layers studied by transmission electron microscopy
5. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length
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2. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography;Applied Physics Letters;2009-08-10
3. Nanometric Scale Investigation of Local Strain in GaInAs Islands by High Resolution and Analytical TEM;Microscopy and Microanalysis;2002-08
4. Island formation by stress induced diffusion on the surface of a very thin layer epitaxially stressed on a substrate;Le Journal de Physique IV;2000-04
5. High resolution electron microscope analysis of lattice distortions and In segregation in highly strained In0.35Ga0.65As coherent islands grown on GaAs (001);Journal of Applied Physics;1999-08-15
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