Author:
Laval J.Y.,Kret S.,Delamarre C.,Bassoul P.,Benabbas T.,Androussi Y.
Abstract
The continuous displacement field within elastically relaxed
GaInAs islands was calculated from digitized HREM images of
{110} cross sections of In0.35Ga0.65As
layers grown on GaAs by molecular beam epitaxy. Experimental maps
of the deformations parallel to the interface
(εx) and along the growth direction
(εz) were drawn and compared with the ones
calculated via the finite element method. It was found that
εx exp was systematically higher than
εx calc and the significant maximum observed
for εz exp within the island could not be
found for εz calc. These discrepancies were
attributed to a variation of the chemical composition in the island.
The maps showing the indium concentration gradient drawn from HREM and
FE calculations were compared to quantitative profiles for indium
concentration obtained by nanometric X-ray microanalysis in TEM. The
measured gradient within the island backs our assumption.
Publisher
Cambridge University Press (CUP)
Cited by
6 articles.
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