Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE;Microelectronic Engineering;2000-05
2. Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy;Journal of Crystal Growth;1999-06
3. InxGa1-xP in Quantum Wire Structures Grown by MOVPE Technique;Heterostructure Epitaxy and Devices — HEAD’97;1998
4. 4.4.5 References for 4.4;Landolt-Börnstein - Group III Condensed Matter
5. 4.4 Quantum-wire structures;Landolt-Börnstein - Group III Condensed Matter
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