Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere-Reference-Cited by-同舟云学术

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Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere

Published:1997-01 Issue:1-4 Volume:170 Page:109-112
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Roehle H.,Schroeter-Janssen H.,Kaiser R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. High purity LP-MOVPE process of IIIV compounds using an inert carriers gas with drastically reduced hazards, presented at the 6th Int. Conf. on Metalorganic Vapor Phase Epitaxy;Hergeth,1992

2. Growth and characterisation of In0.47Ga0.47AsInP deposited by LP-MOVPE using an N2 carrier, presented at EW-MOVPE VI;Hollfelder,1995

3. Proc. of the 8th Int. Conf. on Indium Phosphide and Related Materials;Roehle,1996

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1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Photonic Integrated Circuits on InP;Springer Series in Optical Sciences;2017

3. Selective Area Masked Growth (Nano to Micro);Handbook of Crystal Growth;2015

4. MOVPE growth of Al-free 808nm high power lasers using TBP and TBA in pure N2 ambient;Journal of Crystal Growth;2006-02

5. CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N 2 ambient;Optoelectronic Materials and Devices for Optical Communications;2005-11-24

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