Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine-Reference-Cited by-同舟云学术

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Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine

Published:1997-05 Issue: Volume:175-176 Page:129-133
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hashimoto Akihiro,Aiba Yoshitaka,Motizuki Takanori,Ohkubo Mitugu,Yamamoto Akio

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

2. Abstracts of the topical Workshop on III–V Nitrides;Yamamoto,1995

3. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates

4. In SituCharacterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy

5. Abstracts of the Topical Workshop on III–V Nitrides;Uchida,1995

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