Incorporation of As2 in InAsxP1 − x and its application to quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
2. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
3. Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy
4. Growth of InAsxP1−x/InP multi‐quantum well structures by solid source molecular beam epitaxy
5. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of arsenic species (As[sub 2]∕As[sub 4]) on the relaxation and morphology of step-graded InAs[sub x]P[sub 1−x] on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
2. Finite-field Møller–Plesset perturbation theory and coupled cluster calculations of the electric multipole moments and the dipole polarizability of As2;Chemical Physics;2001-07
3. Solid source MBE growth of InAsP/InP quantum wells;Journal of Electronic Materials;1999-08
4. Optical monitoring of InP monolayer growth rates;Applied Physics Letters;1998-07-20
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