Uniform formation process of self-organized InAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Formation of coherent superdots using metal‐organic chemical vapor deposition
3. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution
4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
5. Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution
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1. Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy;Crystal Growth & Design;2021-05-27
2. Nanostructure Formation Process of MBE;Molecular Beam Epitaxy;2019-02-08
3. Interdot spin transfer dynamics in laterally coupled excited spin ensemble of high-density InGaAs quantum dots;Applied Physics Letters;2018-07-09
4. Growth Process and Photoluminescence Properties of In-Plane Ultrahigh-Density InAs Quantum Dots on InAsSb/GaAs(001);physica status solidi (b);2017-12-05
5. Effect of Sb incorporation on the electronic structure of InAs quantum dots;Physical Review B;2013-08-08
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