Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Light Emission from Quantum-Box Structure by Current Injection
3. Spatial quantization in GaAs–AlGaAs multiple quantum dots
4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
5. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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1. Low areal densities of InAs quantum dots on GaAs(1 0 0) prepared by molecular beam epitaxy;Journal of Crystal Growth;2022-08
2. Emission of an interacting quantum dot system embedded in an optical microcavity;Optik;2019-01
3. Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate;Journal of Luminescence;2012-02
4. Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density;Japanese Journal of Applied Physics;2009-09-24
5. Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots;Japanese Journal of Applied Physics;2009-09-24
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