GaN growth by compound source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. GaN, AlN, and InN: A review
2. Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE
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4. On Surface Cracking of Ammonia for MBE Growth of GaN
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