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Molecular beam epitaxy of (Ga,Mn)N

  • Published:2002-04 Issue: Volume:237-239 Page:1353-1357
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Kondo T.,Kuwabara S.,Owa H.,Munekata H.

Funder

Ministry of Education, Culture, Sports, Science and Technology

New Energy and Industrial Technology Development Organization

Japan Science and Technology Corporation

Precursory Research for Embryonic Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stabilization of ferromagnetism in carbon doped Mgn−2Mn2On clusters;International Journal of Computational Materials Science and Engineering;2021-09-25

2. III-Nitride Dilute Magnetic Semiconductors;Molecular Beam Epitaxy;2019-02-08

3. III-V-Based Magnetic Semiconductors and Spintronics Devices;Molecular Beam Epitaxy;2019-02-08

4. Diffusion of Mn in gallium nitride: Experiment and modelling;Journal of Alloys and Compounds;2019-01

5. Enhanced Ferromagnetic Interaction in Modulation-Doped GaMnN Nanorods;Nanoscale Research Letters;2017-04-20
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