AlN on sapphire and on SiC: CL and Raman study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD
2. Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition
3. Point-defect complexes and broadband luminescence in GaN and AlN
4. Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide
5. Amphoteric properties of substitutional carbon impurity in GaN and AlN
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dependence of oxygen impurity concentration in AlN on the surface roughness during growth;Journal of Applied Physics;2024-04-28
2. Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques;Journal of Materials Chemistry A;2024
3. Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes;Fundamental Research;2021-11
4. Overview of band-edge and defect related luminescence in aluminum nitride;Journal of Luminescence;2016-10
5. Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c-sapphire by high-temperature chemical vapor deposition;physica status solidi (a);2014-06-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3