Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition
2. C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
3. F. Buchali, F. Scheffer, C. Heedt, I. Gyuro, P. Speier, W. Prost, F.J. Tegude, Proceedings of the Fourth InP & Related Materials Conference, Newport, USA, 1992.
4. Carbon doping in InAlAs grown by metalorganic chemical vapor deposition
5. Carbon doping of InAlAs in LP-MOVPE using CBr4
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3. OMVPE of InAlAs Using Alternative Al and As Precursors;MRS Proceedings;2014
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