RF plasma investigations for plasma-assisted MBE growth of (Ga,In)(As,N) materials
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35 (2B) (1996) 1273.
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
4. Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs
5. MOVPE growth of strained InGaAsN/GaAs quantum wells
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